Low subthreshold swing HfLaO/Pentacene organic thin-film transistors

M. F. Chang*, Po-Tsung Lee, S. P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

We have integrated a high-κ HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of -1.3 V, and a field-effect mobility of 0.71 cm2/V ̇ s. This occurred along with an ON - OFF state drive current ratio of 1.0 × 105, when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm2 that is given by the HfLaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 × 10-7 A/cm2 at 2 V.

Original languageEnglish
Pages (from-to)215-217
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number3
DOIs
StatePublished - 1 Mar 2008

Keywords

  • HfLaO
  • High-κ
  • Organic thin-film transistors (OTFTs)
  • Subthreshold swing (SS)

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