TY - JOUR
T1 - Low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference
AU - Huang, Ming Hsin
AU - Fan, Po Chin
AU - Chen, Ke-Horng
PY - 2009/5/25
Y1 - 2009/5/25
N2 - This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 μm 3.3V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5V, and the output voltage is regulated at 5V. Experimental results demonstrate that the charge pump can provide 48mA maximum load current without any oscillation problems.
AB - This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 μm 3.3V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5V, and the output voltage is regulated at 5V. Experimental results demonstrate that the charge pump can provide 48mA maximum load current without any oscillation problems.
KW - Bandgap reference
KW - Charge pump
KW - Dual-phase power stage
KW - Fast transient response
KW - Output ripple
KW - System-on-chip (SoC)
UR - http://www.scopus.com/inward/record.url?scp=65649083083&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2008.2010546
DO - 10.1109/TPEL.2008.2010546
M3 - Article
AN - SCOPUS:65649083083
VL - 24
SP - 1161
EP - 1172
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 5
ER -