Low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference

Ming Hsin Huang*, Po Chin Fan, Ke-Horng Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 μm 3.3V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5V, and the output voltage is regulated at 5V. Experimental results demonstrate that the charge pump can provide 48mA maximum load current without any oscillation problems.

Original languageEnglish
Pages (from-to)1161-1172
Number of pages12
JournalIEEE Transactions on Power Electronics
Volume24
Issue number5
DOIs
StatePublished - 25 May 2009

Keywords

  • Bandgap reference
  • Charge pump
  • Dual-phase power stage
  • Fast transient response
  • Output ripple
  • System-on-chip (SoC)

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