Low RF noise and power loss for ion-implanted Si having an improved implantation process

K. T. Chan*, Albert Chin, S. P. McAlister, Chi-Yang Chang, J. Liu, S. C. Chien, D. S. Duh, W. J. Lin

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

18 Scopus citations

Abstract

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss ≤0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of ∼4 MeV. This enables easier process integration into current VLSI technology.

Original languageEnglish
Pages (from-to)28-30
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number1
DOIs
StatePublished - 1 Jan 2003

Keywords

  • Loss
  • Noise
  • Power
  • RF
  • Transmission line

Fingerprint Dive into the research topics of 'Low RF noise and power loss for ion-implanted Si having an improved implantation process'. Together they form a unique fingerprint.

Cite this