Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 18 Aug 2003|
|Event||2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States|
Duration: 8 Jun 2003 → 13 Jun 2003