Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process

K. T. Chan*, Albert Chin, S. P. McAlister, Chi-Yang Chang, C. Tseng, V. Liang, J. K. Chen, S. C. Chien, D. S. Duh, W. J. Lin

*Corresponding author for this work

Research output: Contribution to journalConference article

21 Scopus citations

Abstract

Very low power loss ≤, 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of ∼ 4 MeV for easier process integration into current VLSI technology.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
StatePublished - 18 Aug 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 8 Jun 200313 Jun 2003

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    Chan, K. T., Chin, A., McAlister, S. P., Chang, C-Y., Tseng, C., Liang, V., Chen, J. K., Chien, S. C., Duh, D. S., & Lin, W. J. (2003). Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process. IEEE MTT-S International Microwave Symposium Digest, 2, 963-966. https://doi.org/10.1109/MWSYM.2003.1212529