Low resistive InGaN film grown by metalorganic chemical vapor deposition

Niraj Man Shrestha, Prerna Chauhan, Yuen Yee Wong, Yi-Ming Li*, Seiji Samukawa, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Indium gallium nitride (InGaN) samples were grown on sapphire substrate with low temperature GaN buffer by metalorganic chemical vapor deposition (MOCVD) under varying growth conditions, such as temperature, pressure and ammonia flow. Although high indium composition is considered as indispensable parameter for sheet carrier concentration (ns) and low sheet resistance (Rs), our outcomes disclose that higher indium composition in InGaN film doesn't always have high ns and low Rs. Acceptor nature of carbon related defects, a major trapping sites for electrons, plays a crucial role to limit the carrier concentrations in the InGaN specially grown at low pressure, low temperature and low ammonia flow. Furthermore, study of metal contacts deposited on the grown samples by transmission line method (TLM) shows that carrier concentration is the most important factor to obtain low contact resistance. The measured contact resistance for the sample with 4.5× 1016 cm2 carrier concentration is 0.13 Ωmm which is among the lowest contact resistance for GaN based materials grown by MOCVD. This proves that the use of InGaN in source and drain contact region can surpassingly reduce contact resistance and significantly improve device performance of AlGaN/GaN device.

Original languageEnglish
Article number108974
JournalVacuum
Volume171
DOIs
StatePublished - Jan 2020

Keywords

  • And carbon concentration
  • Contact resistance
  • Incorporation efficiency
  • Indium composition
  • InGaN
  • MOCVD
  • Sheet concentration
  • Sheet resistance

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