Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate

J. C. Fan*, Chia-Ming Tsai, K. Y. Chen, S. Y. Wang, Kuo-Jui Lin, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Low-resistance ohmic conduction across an epitaxially lifted-off (ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. This ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.

Original languageEnglish
Pages (from-to)110-113
Number of pages4
JournalJournal of Electronic Materials
Volume27
Issue number3
DOIs
StatePublished - 1 Jan 1998

Keywords

  • Epitaxial lift-off (ELO) method
  • Laser diode
  • n-type GaAs

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