Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments

C. C. Lee*, C. P. Lee, M. H. Yeh, Wei-I Lee, C. T. Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A study was performed on the scheme for fabricating low resistance ohmic contacts to n-GaN. The effects of Argon flow rate on contact resistance for ohmic contacts to n-GaN were also presented. It was found out that the electrical characteristics of ohmic contacts would not be influenced by the effect of hydrogen passivation of dopants in n-GaN.

Original languageEnglish
Pages (from-to)1501-1504
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
DOIs
StatePublished - 1 Jul 2003

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