A study was performed on the scheme for fabricating low resistance ohmic contacts to n-GaN. The effects of Argon flow rate on contact resistance for ohmic contacts to n-GaN were also presented. It was found out that the electrical characteristics of ohmic contacts would not be influenced by the effect of hydrogen passivation of dopants in n-GaN.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Jul 2003|