Low-pressure direct-liquid-cooling technology for GaN power transistors

Nobuyuki Otsuka*, Shuichi Nagai, Manabu Yanagihara, Yasuhiro Uemoto, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Power concentration due to tremendous chip size reduction requires superior thermal conductivity. We first demonstrate the reduction in junction temperatures in low-pressure direct liquid cooling (LP-DLC) of GaN power devices for high-power and high-voltage switching applications. In the LP-DLC structure, junction temperature reductions of up to 55 K or 100% higher power levels were demonstrated by introducing a working fluid to a package. The thermal resistance has decreased to 28% in the LP-DLC structure with a radiator.

Original languageEnglish
Article number04DF07
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2011

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