Low-pressure chemical vapor deposition of titanium and zirconium carbonitride thin films from M(NEt2)4 (M = Ti and Zr)

Hsin-Tien Chiu*, Huang Cheng-Chung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Ti(NEt2)4 and Zr(NEt2)4 were used as single-source precursors to deposit titanium and zirconium carbonitride thin films on Si(100) and glass substrates at temperatures 673-923 K by low-pressure chemical vapor deposition. The thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, wavelength dispersive spectroscopy, and infrared spectroscopy. The films deposited at high temperatures crystallized into cubic structures as shown by X-ray diffraction. The nitrogen-to-metal ratios were close to unity in most cases while the carbon-to-metal ratios decreased with increasing deposition temperature. At deposition temperatures below 773 K, hydrocarbon stretchings were observed by IR. Attempts to decrease carbon levels in thin films by adding H2 into the carrier gas showed opposite effects.

Original languageEnglish
Pages (from-to)194-199
Number of pages6
JournalMaterials Letters
Volume16
Issue number4
DOIs
StatePublished - 1 Jan 1993

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