Low-pressure chemical vapor deposited oxide process for MOS device application.

Jack Lee*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80 angstrom-230 angstrom) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 angstrom/min with good thickness uniformity are discussed. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same leakage current and high breakdown fields as the thermal oxides. They also exhibit significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of ≲3 × 1010 cm-2 eV-1 are obtained for CVD devices. These results indicate that these LPCVD oxide films are promising dielectrics for MOS device application.

Original languageEnglish
Pages (from-to)49-50
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1988

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