Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer

P. H. Yeh*, C. H. Yu, L. J. Chen, H. H. Wu, Po-Tsun Liu, T. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

A metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the SiO2 layer has been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Original languageEnglish
Article number193504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number19
DOIs
StatePublished - 7 Nov 2005

Fingerprint Dive into the research topics of 'Low-power memory device with NiSi<sub>2</sub> nanocrystals embedded in silicon dioxide layer'. Together they form a unique fingerprint.

  • Cite this