Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer

P. H. Yeh*, C. H. Yu, L. J. Chen, H. H. Wu, Po-Tsun Liu, T. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


A metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the SiO2 layer has been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Original languageEnglish
Article number193504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 7 Nov 2005

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