Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

Hidetoshi Ishida; Haruhiko Koizumi; Kazuo Miyatsuji; Hiroshi Takenaka; Tsuyoshi Tanaka; Daisuke Ueda

doi:10.1109/MWSYM.1997.602880

Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

Hidetoshi Ishida^*, Haruhiko Koizumi, Kazuo Miyatsuji, Hiroshi Takenaka, Tsuyoshi Tanaka, Daisuke Ueda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

Original language	English
Article number	5672297
Pages (from-to)	669-672
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.1997.602880
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: 8 Jun 1997 → 13 Jun 1997

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title = "Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs",

abstract = "We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.",

author = "Hidetoshi Ishida and Haruhiko Koizumi and Kazuo Miyatsuji and Hiroshi Takenaka and Tsuyoshi Tanaka and Daisuke Ueda",

year = "1997",

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doi = "10.1109/MWSYM.1997.602880",

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pages = "669--672",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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note = "null ; Conference date: 08-06-1997 Through 13-06-1997",

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Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs. / Ishida, Hidetoshi; Koizumi, Haruhiko; Miyatsuji, Kazuo; Takenaka, Hiroshi; Tanaka, Tsuyoshi; Ueda, Daisuke.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 5672297, 01.01.1997, p. 669-672.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

AU - Ishida, Hidetoshi

AU - Koizumi, Haruhiko

AU - Miyatsuji, Kazuo

AU - Takenaka, Hiroshi

AU - Tanaka, Tsuyoshi

AU - Ueda, Daisuke

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

AB - We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

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U2 - 10.1109/MWSYM.1997.602880

DO - 10.1109/MWSYM.1997.602880

M3 - Conference article

AN - SCOPUS:0030647124

VL - 2

SP - 669

EP - 672

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

M1 - 5672297

Y2 - 8 June 1997 through 13 June 1997

ER -

Low power GaAs front-end IC with current-reuse configuration using 0.15 μm gate MODFETs

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