Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu; Chien-Nan Kuo

doi:10.1109/SMIC.2005.1587997

Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu^*, Chien-Nan Kuo

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

27 Scopus citations

Abstract

A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

Original language	English
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages	365-368
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2005.1587997
State	Published - 1 Dec 2006
Event	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States Duration: 18 Jan 2006 → 20 Jan 2006

Publication series

Name	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume	2006

Conference

Conference	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country	United States
City	San Diego, CA
Period	18/01/06 → 20/01/06

Keywords

Baluns
Phase splitters
UWB active baluns

Access to Document

10.1109/SMIC.2005.1587997

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Low power 8-GHz ultra-wideband active balun'. Together they form a unique fingerprint.

Cite this

@inproceedings{2c482001de224f6da56498b5b110b6f1,

title = "Low power 8-GHz ultra-wideband active balun",

abstract = "A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.",

keywords = "Baluns, Phase splitters, UWB active baluns",

author = "Hsu, {Ta Tao} and Chien-Nan Kuo",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/SMIC.2005.1587997",

language = "English",

isbn = "0780394720",

series = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

pages = "365--368",

booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

note = "null ; Conference date: 18-01-2006 Through 20-01-2006",

}

Hsu, TT & Kuo, C-N 2006, Low power 8-GHz ultra-wideband active balun. in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers., 1587997, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, vol. 2006, pp. 365-368, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, United States, 18/01/06. https://doi.org/10.1109/SMIC.2005.1587997

Low power 8-GHz ultra-wideband active balun. / Hsu, Ta Tao; Kuo, Chien-Nan.

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 365-368 1587997 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low power 8-GHz ultra-wideband active balun

AU - Hsu, Ta Tao

AU - Kuo, Chien-Nan

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

AB - A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

KW - Baluns

KW - Phase splitters

KW - UWB active baluns

UR - http://www.scopus.com/inward/record.url?scp=33847082546&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2005.1587997

DO - 10.1109/SMIC.2005.1587997

M3 - Conference contribution

AN - SCOPUS:33847082546

SN - 0780394720

SN - 9780780394728

T3 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

SP - 365

EP - 368

BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Y2 - 18 January 2006 through 20 January 2006

ER -