Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu*, Chien-Nan Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

27 Scopus citations

Abstract

A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

Original languageEnglish
Title of host publication2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages365-368
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
Duration: 18 Jan 200620 Jan 2006

Publication series

Name2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume2006

Conference

Conference2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryUnited States
CitySan Diego, CA
Period18/01/0620/01/06

Keywords

  • Baluns
  • Phase splitters
  • UWB active baluns

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