Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu; Chien-Nan Kuo

doi:10.1109/SMIC.2005.1587997

Low power 8-GHz ultra-wideband active balun

Ta Tao Hsu^*, Chien-Nan Kuo

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

28 Scopus citations

Abstract

A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

Original language	English
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages	365-368
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2005.1587997
State	Published - 1 Dec 2006
Event	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States Duration: 18 Jan 2006 → 20 Jan 2006

Publication series

Name	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume	2006

Conference

Conference	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country	United States
City	San Diego, CA
Period	18/01/06 → 20/01/06

Keywords

Baluns
Phase splitters
UWB active baluns

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10.1109/SMIC.2005.1587997

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title = "Low power 8-GHz ultra-wideband active balun",

abstract = "A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.",

keywords = "Baluns, Phase splitters, UWB active baluns",

author = "Hsu, {Ta Tao} and Chien-Nan Kuo",

year = "2006",

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Hsu, TT & Kuo, C-N 2006, Low power 8-GHz ultra-wideband active balun. in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers., 1587997, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, vol. 2006, pp. 365-368, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, United States, 18/01/06. https://doi.org/10.1109/SMIC.2005.1587997

Low power 8-GHz ultra-wideband active balun. / Hsu, Ta Tao; Kuo, Chien-Nan.

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 365-368 1587997 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Kuo, Chien-Nan

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N2 - A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

AB - A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3° of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.

KW - Baluns

KW - Phase splitters

KW - UWB active baluns

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BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Y2 - 18 January 2006 through 20 January 2006

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Low power 8-GHz ultra-wideband active balun

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