Low Power 1T DRAM/NVM Versatile Memory Featuring Steep Sub-60-mV/decade Operation, Fast 20-ns Speed, and Robust 85 degrees C-Extrapolated 10(16) Endurance

Yu Chien Chiu, Chun-Yen Chang, Chun-Hu Cheng, Min Hung Lee, Hsiao-Hsuan Hsu, Shiang Shiou Yen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we report a one-transistor (1T) versatile memory; the memory transistor characteristics achieve sub-60-mV/dec operation and considerably low off-state leakage of 10(-15) A/mu m at a supply voltage below 0.5V. The versatile memory features DRAM/NVM functions of large Delta V-T window of 2.8V, fast 20-ns speed, 10(3)s retention at 85 degrees C, and long extrapolated 10(16) endurance at 85 degrees C, which show the potential for 3D memory application with severe requirement on both high density and low power consumption.
Original languageEnglish
Title of host publication35th Anniversary of the Symposium on VLSI Technology (VLSI Technology)
StatePublished - 2015

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