Low-phase-noise SiGe HBT VCOs using trifilar-transformer feedback

Chin-Chun Meng*, Jin Siang Syu, Sheng Che Tseng, Yu Wen Chang, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The SiGe heterojunction bipolar transistor (HBT) voltage controlled oscillators (VCOs) using trifilar-transformer feedback at emitters, bases and collectors are demonstrated. The integrated trifilar transformer can allow dual voltage swings across the collectors and emitters of a cross-coupled differential pair and separate the bias between bases and collectors to optimize the output power. The tank inductance is also improved by the mutual coupling of the trifilar transformer. Thus, 191 dBc/Hz FOM (figure of merit) is achieved and is comparable to that of the state-of-the-art VCO.

Original languageEnglish
Title of host publication2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Pages249-252
Number of pages4
DOIs
StatePublished - 12 Dec 2008
Event2008 IEEE MTT-S International Microwave Symposium Digest, MTT - Atlanta, GA, United States
Duration: 15 Jun 200820 Jun 2008

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2008 IEEE MTT-S International Microwave Symposium Digest, MTT
CountryUnited States
CityAtlanta, GA
Period15/06/0820/06/08

Keywords

  • Phase noise
  • SiGe heterojunction bipolar transistor (HBT)
  • Trifilar transformer
  • Voltage controlled oscillator (VCO)

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    Meng, C-C., Syu, J. S., Tseng, S. C., Chang, Y. W., & Huang, G. W. (2008). Low-phase-noise SiGe HBT VCOs using trifilar-transformer feedback. In 2008 IEEE MTT-S International Microwave Symposium Digest, MTT (pp. 249-252). [4633150] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2008.4633150