Low-operating-voltage ultrathin junctionless poly-si thin-film transistor technology for RF applications

Tzu I. Tsai*, Kun Ming Chen, Horng-Chih Lin, Ting Yao Lin, Chun Jung Su, Tien-Sheng Chao, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 ×10 7. Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 μm exhibits a cutoff frequency (f t) of 3.36 GHz and a maximum oscillation frequency (f max) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (S id) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications.

Original languageEnglish
Article number6302168
Pages (from-to)1565-1567
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number11
DOIs
StatePublished - 21 Sep 2012

Keywords

  • Junctionless (JL)
  • low-frequency noise (LFN)
  • poly-Si
  • radio frequency (RF)
  • thin-film transistor (TFT)

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