Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

Fang Ze Hsu, Jau Yang Wu, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of singlephoton detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.

Original languageEnglish
Pages (from-to)55-57
Number of pages3
JournalOptics Letters
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 2013

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