Low noise RF MOSFETs on flexible plastic substrates

H. L. Kao*, Albert Chin, B. F. Hung, C. F. Lee, J. M. Lai, S. P. McAlister, G. S. Samudra, Won Jong Yoo, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

We report a low minimum noise figure (NF min ) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NF min to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (L g = 80 nm) devices.

Original languageEnglish
Pages (from-to)489-491
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number7
DOIs
StatePublished - 1 Jul 2005

Keywords

  • Associated gain
  • MOSFET
  • Plastic
  • RF noise

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    Kao, H. L., Chin, A., Hung, B. F., Lee, C. F., Lai, J. M., McAlister, S. P., Samudra, G. S., Yoo, W. J., & Chi, C. C. (2005). Low noise RF MOSFETs on flexible plastic substrates. IEEE Electron Device Letters, 26(7), 489-491. https://doi.org/10.1109/LED.2005.851238