Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate

Y. C. Lien*, Edward Yi Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M. Lee, C. S. Lee, S. H. Chen, P. T. Shen, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

30 Scopus citations

Abstract

A 0.1-μm T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 μm and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency fT of 154 GHz and a maximum frequency fmax of 300 GHz. The noise figure for the 160 μm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 μm MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.

Original languageEnglish
Pages (from-to)348-350
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number6
DOIs
StatePublished - 1 Jun 2004

Keywords

  • Cutoff frequency
  • E-beam
  • Gate length
  • Maximum frequency
  • Metamorphic high electron-mobility transistors (MHEMTs)
  • Noise figure (NF)
  • T-gate
  • Thermally reflow

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