Low noise and high gain RF MOSFETs on plastic substrates

H. L. Kao*, Albert Chin, C. C. Huang, B. F. Hung, K. C. Chiang, Z. M. Lai, S. P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages295-298
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • Associated gain
  • MOSFET
  • Plastic
  • RF Noise

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    Kao, H. L., Chin, A., Huang, C. C., Hung, B. F., Chiang, K. C., Lai, Z. M., McAlister, S. P., & Chi, C. C. (2005). Low noise and high gain RF MOSFETs on plastic substrates. In 2005 IEEE MTT-S International Microwave Symposium Digest (pp. 295-298). [1516584] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005). https://doi.org/10.1109/MWSYM.2005.1516584