A low-noise amplifier (LNA) with cascode structure and shunt-peaking load is presented in this article. Both Narrow-band input impedance and wide-band input impedance LNAs were implemented in 0.18 m CMOS process. Maximum power gain of the narrow-band input impedance LNA is 19.3 dB; maximum power gain of the wide-band input impedance LNA is 15.3 dB. Minimum noise figure of the narrow-band input impedance LNA is 3.1 dB; minimum noise figure of the wide-band input impedance LNA is 3.0 dB. Power consumptions including buffers are 24.5 and 25.6 mW, respectively.
|Number of pages||7|
|Journal||Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an|
|State||Published - 4 Jul 2015|
- impedance matching
- low-noise amplifier