Low-noise amplifier with narrow-band and wide-band input impedance matching design

Zhe Yang Huang, Chun Chieh Chen, Chung-Chih Hung*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A low-noise amplifier (LNA) with cascode structure and shunt-peaking load is presented in this article. Both Narrow-band input impedance and wide-band input impedance LNAs were implemented in 0.18 m CMOS process. Maximum power gain of the narrow-band input impedance LNA is 19.3 dB; maximum power gain of the wide-band input impedance LNA is 15.3 dB. Minimum noise figure of the narrow-band input impedance LNA is 3.1 dB; minimum noise figure of the wide-band input impedance LNA is 3.0 dB. Power consumptions including buffers are 24.5 and 25.6 mW, respectively.

Keywords

  • impedance matching
  • LNA
  • low-noise amplifier
  • ultra-wideband

Fingerprint Dive into the research topics of 'Low-noise amplifier with narrow-band and wide-band input impedance matching design'. Together they form a unique fingerprint.

Cite this