Low-leakage tetragonal ZrO 2 (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

Chen Han Chou*, Hao Hsuan Chang, Chung Chun Hsu, Wen Kuan Yeh, Chao Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We successfully fabricated gate stacks (ZrO 2 /GeO x /Ge) with a subnanometer equivalent oxide thickness (EOT) and low-leakage current on n-/p-Ge through plasma-enhanced atomic layer deposition (ALD). A 0.78-nm-thick GeO x was formed through plasma oxidation (i.e., in situ plasma interfacial passivation, followed by 3.48-nm-thick ZrO 2 growth in the same ALD reactor). A subnanometer EOT of ∼0.9 nm was achieved with a relatively high dielectric constant (roughly 30) of tetragonal-phase ZrO 2 . The gate leakage was ∼ 1 × 10 -4 A/cm 2 at V FB -1V, and roughly 5 × 10 -5 A/cm 2 at V FB +1V on p- and n-type Ge, respectively. Our ZrO 2 stabilized in the tetragonal phase, when the post-deposition annealing temperature, was higher than 500 °C. Therefore, the proposed scheme is simple and effective for use in pursuing an ultralow EOT gate dielectric on Ge.

Original languageEnglish
Article number7358074
Pages (from-to)138-141
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number2
DOIs
StatePublished - 1 Feb 2016

Keywords

  • equivalent oxide thickness
  • GeOx
  • Germanium
  • plasma enhanced atomic layer deposition
  • tetragonal ZrO2

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