Low-K/Cu CMOS Logic Based SoC Technology for 10Gb Transceiver with 115GHz fT, 80GHz fMAX RF CMOS, High-Q MiM Capacitor and Spiral Cu Inductor

J. C. Guo*, W. Y. Lien, M. C. Hung, C. C. Liu, C. W. Chen, C. M. Wu, Y. C. Sun, Ping Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

For the first time, foundry CMOS logic based RF technology is introduced for 10Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115GHz fT, 80GHz fMAX and 2.2dB NFmin at 10GHz has been fabricated by aggressive device scaling and layout optimization. High Q MiM capacitor and spiral Cu inductor have been successfully implemented in the same chip by 0.13μm low-K/Cu BEOL technology. Core 1.0V MOS and/or junction varactors for VCO at 10GHz are offerings free of extra cost but realized by elaborated layout. Triple well is introduced to provide superior substrate noise isolation by >10dB suppression at 10GHz and beyond.

Original languageEnglish
Pages (from-to)39-40
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Oct 2003
Event2003 Symposium on VLSI Technology - Kyoto, Japan
Duration: 10 Jun 200312 Jun 2003

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