Low-K/Cu CMOS-based SoC technology with 115-GHz fT, 100-GHz fmax, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Jyh-Chyurn Guo*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NF min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-;μm low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.

Original languageEnglish
Article number1668232
Pages (from-to)331-338
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume19
Issue number3
DOIs
StatePublished - 1 Aug 2006

Keywords

  • f
  • f
  • Inductor
  • MiM capacitor
  • NF
  • RF CMOS
  • Varactor

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