Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NF min at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-;μm low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.
- MiM capacitor
- RF CMOS