Low-I RESET unipolar HfO 2 RRAM and tunable resistive-switching mode via interface engineering

Kuan Liang Lin*, Tuo-Hung Hou, Yao Jen Lee, Jun Hung Lin, Jhe Wei Chang, Jiann Shieh, Cheng Tung Chou, Wen Hsiung Chang, Wen Yueh Jang, Chen Hsi Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 7 Dec 20119 Dec 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Conference

Conference2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period7/12/119/12/11

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