Low frequency noise in nanoscale pMOSFETs with strain induced mobility enhancement and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Local strain effect on low frequency noise (LFN) of pMOSFETs with gate length down to 60 nm was investigated in this paper. Novel and interesting results were identified from the pMOSFETs adopting embedded SiGe (e-SiGe) in source/drain for uni-axial compressive stress. This local compressive strain can realize significant mobility enhancement and desired current boost in nanoscale pMOSFETs. However, the dramatic increase of LFN emerges as a penalty traded off with mobility enhancement. The escalated LFN may become a critical killer to analog and RF circuits. Forward body biases (FBB) can improve the effective mobility (μeff) and reduce LFN attributed to reduced normal field (Eeff). However, the benefit from FBB becomes insignificant in strained pMOSFETs with sub-100 nm gate length.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages785-788
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 7 Jun 200912 Jun 2009

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period7/06/0912/06/09

Keywords

  • Low frequency noise
  • Mobility
  • pMOSFET
  • Strain

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