Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Venkatesan Nagarajan, Kun Ming Chen*, Hsin Yi Lin, Hsin Hui Hu, Guo Wei Huang, Chuang Ju Lin, Bo Yuan Chen, Deepak Anandan, Sankalp Kumar Singh, Chai Hsun Wu, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle


The low-frequency noise characteristics of AlGaN/GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices with a 3-μm-thick GaN buffer and a 25-nm-thick Al0.22Ga0.78N barrier layer were fabricated on the silicon wafer. For MIS-HEMTs, a 25-nm-thick SiN layer was deposited as a gate dielectric. The measured low-frequency noises show a 1/f spectrum and can be described by the carrier number fluctuation model. Different noise responses to the UV light between HEMTs and MIS-HEMTs were observed. By comparing the noise data in dark and under UV illumination, the noise sources under the gate and in the ungated gate-drain access region have been identified. From these results, we can find a design guideline to improve the noise and reliability of GaN-based devices for optoelectronic applications.

Original languageEnglish
Article number9093974
Pages (from-to)405-409
Number of pages5
JournalIEEE Transactions on Nanotechnology
StatePublished - 14 May 2020


  • GaN
  • HEMT
  • low-frequency noise
  • optoelec- tronic
  • UV illumination

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