Low-frequency noise characteristics of MISFET's with LA2O 3 gate dielectrics

H. Sauddin*, Y. Yoshihara, S. Ohmi, K. Tsutsui, H. Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

This work presents low-frequency noise and related electrical characteristics of n-type MISFET's with Lanthanum Oxide (La2O 3) as the gate dielectrics for the first time. The drain-current-normalized noise spectrum of MISFET's with La2O 3 gate dielectrics have one order of magnitude higher then that of the SiO2 with the same channel area for the noises measured in both linear and saturation region.

Original languageEnglish
Pages415-423
Number of pages9
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 12 Oct 200316 Oct 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period12/10/0316/10/03

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