Abstract
TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.
| Original language | English |
|---|---|
| Pages (from-to) | 573-579 |
| Number of pages | 7 |
| Journal | Scripta Materialia |
| Volume | 42 |
| Issue number | 6 |
| DOIs | |
| State | Published - 28 Feb 2000 |
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Cite this
Huang, J. H., Lin, C-H., Ma, C. H., & Chen, H. (2000). Low energy ion beam assisted deposition of TiN thin films on silicon. Scripta Materialia, 42(6), 573-579. https://doi.org/10.1016/S1359-6462(99)00393-0