Low energy ion beam assisted deposition of TiN thin films on silicon

J. H. Huang, Chun-Hsiung Lin, C. H. Ma, Haydn Chen

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.

Original languageEnglish
Pages (from-to)573-579
Number of pages7
JournalScripta Materialia
Volume42
Issue number6
DOIs
StatePublished - 28 Feb 2000

Fingerprint Dive into the research topics of 'Low energy ion beam assisted deposition of TiN thin films on silicon'. Together they form a unique fingerprint.

  • Cite this