Low energy ion beam assisted deposition of TiN thin films on silicon

J. H. Huang; Chun-Hsiung Lin; C. H. Ma; Haydn Chen

doi:10.1016/S1359-6462(99)00393-0

Low energy ion beam assisted deposition of TiN thin films on silicon

J. H. Huang, Chun-Hsiung Lin, C. H. Ma, Haydn Chen

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.

Original language	English
Pages (from-to)	573-579
Number of pages	7
Journal	Scripta Materialia
Volume	42
Issue number	6
DOIs	https://doi.org/10.1016/S1359-6462(99)00393-0
State	Published - 28 Feb 2000

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@article{86f563500c614883bff59053972126cf,

title = "Low energy ion beam assisted deposition of TiN thin films on silicon",

abstract = "TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.",

author = "Huang, {J. H.} and Chun-Hsiung Lin and Ma, {C. H.} and Haydn Chen",

year = "2000",

month = feb,

day = "28",

doi = "10.1016/S1359-6462(99)00393-0",

language = "English",

volume = "42",

pages = "573--579",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Low energy ion beam assisted deposition of TiN thin films on silicon

AU - Huang, J. H.

AU - Lin, Chun-Hsiung

AU - Ma, C. H.

AU - Chen, Haydn

PY - 2000/2/28

Y1 - 2000/2/28

N2 - TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.

AB - TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN.

UR - http://www.scopus.com/inward/record.url?scp=0033885644&partnerID=8YFLogxK

U2 - 10.1016/S1359-6462(99)00393-0

DO - 10.1016/S1359-6462(99)00393-0

M3 - Article

AN - SCOPUS:0033885644

VL - 42

SP - 573

EP - 579

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 6

ER -