Low Dit high-k/In0.53Ga0.47As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction

D. Hassan Zadeh, H. Oomine, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

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