Low-dislocation relaxed SiGe grown on an effective compliant substrate

Y. H. Luo*, J. L. Liu, G. Jin, K. L. Wang, C. D. Moore, M. S. Goorsky, C. Chih, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalConference article

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Abstract

An effective compliant substrate was successfully fabricated for growth of high quality relaxed SiGe templates. The compliant substrate was fabricated by synthesizing a 20% B2O3 concentration borosilicate glass in the silicon on insulator wafers through boron and oxygen implantation followed by high temperature annealing. Substrates with 5%, 10% and 20% B2O3 were used for 150 nm Si0.75Ge0.25 epitaxy. Double-axis x-ray diffraction measurements determined the relaxation and composition of the Si1-xGex layers. Cross-sectional transmission electron microscopy was used to observe the lattice of the SiGe epilayer and the Si substrate, dislocation density and distribution. Raman spectroscopy was combined with step etching to measure the samples. For 20% BSG sample, the strain in the thin Si layer was calculated from the Raman shift and it matched the results from DAXRD very well. The density of threading dislocation on the surface of 500 nm Si0.75Ge0.25 layers was 2 × 104 cm-2 for the sample on the 20% borosilicate glass substrate. This method is promising to prepare effective compliant substrate for low-dislocation relaxed SiGe growth.

Original languageEnglish
Pages (from-to)950-955
Number of pages6
JournalJournal of Electronic Materials
Volume29
Issue number7
DOIs
StatePublished - 1 Jan 2000
EventThe 1999 International Conference on Compliant and Alternative Substrate Technology - Lake Buena Vista, FL, USA
Duration: 19 Sep 199923 Sep 1999

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    Luo, Y. H., Liu, J. L., Jin, G., Wang, K. L., Moore, C. D., Goorsky, M. S., Chih, C., & Tu, K-N. (2000). Low-dislocation relaxed SiGe grown on an effective compliant substrate. Journal of Electronic Materials, 29(7), 950-955. https://doi.org/10.1007/s11664-000-0187-0