@inproceedings{33bcf16ed66a4fd78be6dbdbb3cb0f09,
title = "Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography",
abstract = "Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.",
author = "Chen, {H. L.} and Fu-Hsiang Ko and Chu, {T. C.} and Cheng, {H. C.} and Huang, {T. Y.}",
year = "2001",
month = jan,
day = "1",
doi = "10.1109/IMNC.2001.984124",
language = "English",
series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "132--133",
booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
address = "United States",
note = "null ; Conference date: 31-10-2001 Through 02-11-2001",
}