Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

H. L. Chen, Fu-Hsiang Ko, T. C. Chu, H. C. Cheng, T. Y. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages132-133
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
StatePublished - 1 Jan 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 31 Oct 20012 Nov 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period31/10/012/11/01

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    Chen, H. L., Ko, F-H., Chu, T. C., Cheng, H. C., & Huang, T. Y. (2001). Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 132-133). [984124] (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984124