Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

H. L. Chen; Fu-Hsiang Ko; T. C. Chu; H. C. Cheng; T. Y. Huang

doi:10.1109/IMNC.2001.984124

Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

H. L. Chen, Fu-Hsiang Ko, T. C. Chu, H. C. Cheng, T. Y. Huang

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	132-133
Number of pages	2
ISBN (Electronic)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984124
State	Published - 1 Jan 2001
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: 31 Oct 2001 → 2 Nov 2001

Publication series

Name	2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2001
Country	Japan
City	Shimane
Period	31/10/01 → 2/11/01

Access to Document

10.1109/IMNC.2001.984124

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Chen, H. L., Ko, F-H., Chu, T. C., Cheng, H. C., & Huang, T. Y. (2001). Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 132-133). [984124] (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984124

Chen, H. L. ; Ko, Fu-Hsiang ; Chu, T. C. ; Cheng, H. C. ; Huang, T. Y. / Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 132-133 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

@inproceedings{33bcf16ed66a4fd78be6dbdbb3cb0f09,

title = "Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography",

abstract = "Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.",

author = "Chen, {H. L.} and Fu-Hsiang Ko and Chu, {T. C.} and Cheng, {H. C.} and Huang, {T. Y.}",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/IMNC.2001.984124",

language = "English",

series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "132--133",

booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

address = "United States",

note = "null ; Conference date: 31-10-2001 Through 02-11-2001",

}

Chen, HL, Ko, F-H, Chu, TC, Cheng, HC & Huang, TY 2001, Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984124, 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 132-133, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 31/10/01. https://doi.org/10.1109/IMNC.2001.984124

Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. / Chen, H. L.; Ko, Fu-Hsiang; Chu, T. C.; Cheng, H. C.; Huang, T. Y.

2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 132-133 984124 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

AU - Chen, H. L.

AU - Ko, Fu-Hsiang

AU - Chu, T. C.

AU - Cheng, H. C.

AU - Huang, T. Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.

AB - Summary form only given. For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.

UR - http://www.scopus.com/inward/record.url?scp=84960373085&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2001.984124

DO - 10.1109/IMNC.2001.984124

M3 - Conference contribution

AN - SCOPUS:84960373085

T3 - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

SP - 132

EP - 133

BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 31 October 2001 through 2 November 2001

ER -

Chen HL, Ko F-H, Chu TC, Cheng HC, Huang TY. Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 132-133. 984124. (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). https://doi.org/10.1109/IMNC.2001.984124

Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

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