Low dielectric constant polymer materials as bottom antireflective coating layers for both KrF and ArF lithography

Hsuen Li Chen*, Hsu Chun Cheng, Fu-Hsiang Ko, Tien Chi Chu, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described.

Original languageEnglish
Pages (from-to)4046-4050
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number6 B
DOIs
StatePublished - 1 Jun 2002

Keywords

  • ArF lithography
  • Bottom antireflective coatings
  • KrF lithography
  • Low-dielectric constant materials
  • SiLK

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