Low dielectric constant FLARE 2.0 films as bottom antireflective coating layers for ArF lithography

H. L. Chen*, H. C. Cheng, M. Y. Li, Fu-Hsiang Ko, T. Y. Huang, T. C. Chu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate a new bottom antireflective coating (BARC) layer for ArF lithography. The antireflective layers are composed of a low dielectric constant FLARE 2.0 film and its etching hard mask layer, such as oxide or nitride. By adding an optimized thin oxide or nitride layer, the reflectance of less than 1% at resist / silicon substrate interface can be achieved. The swing effect in the resist is also shown significantly reduced. It also has a great potential to be used as BARC layer on other highly reflectance substrate such as copper, aluminum, tungsten, titanium nitride, and tantalum nitride, which are commonly used in metal interconnect. Since it is easy to reduce reflectance by adding a FLARE film and its etching hard mask layer without adding an extra BARC layer. It is convenient to use this structure for patterning low dielectric materials in ArF lithography. Suitable etching characteristics and thermal stability of FLARE 2.0 based BARC layers are also shown in this paper.

Original languageEnglish
Pages (from-to)1041-1049
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4346
Issue number2
DOIs
StatePublished - 1 Dec 2001
EventOptical Microlithograpy XIV - Santa Clara, CA, United States
Duration: 27 Feb 20012 Mar 2001

Keywords

  • ArF lithography
  • Bottom Antireflective Coating Layers
  • Low Dielectric Constant Materials

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