@inproceedings{a7b97d8127674197ba8fe64d8420bf85,
title = "Low defects and high quality Al2O3 Ge-on-insulator MOSFETs",
abstract = "High quality and dislocation free Al2O3 Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10-3 A/cm2 at 1 V and same 1.7 nm EOT with Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al2O3/Si control devices and SiO2/Si universal mobility at Eeff of 1 MV/cm.",
keywords = "Breakdown voltage, Capacitance-voltage characteristics, Dielectric breakdown, Etching, MOSFET circuits, Plasma applications, Plasma temperature, Wafer bonding",
author = "Yu, {D. S.} and Huang, {C. H.} and A. Chin and Chen, {W. J.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/DRC.2003.1226861",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "39--40",
booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",
address = "United States",
note = "null ; Conference date: 23-06-2003 Through 25-06-2003",
}