Low defects and high quality Al2O3 Ge-on-insulator MOSFETs

D. S. Yu; C. H. Huang; A. Chin; W. J. Chen

doi:10.1109/DRC.2003.1226861

Low defects and high quality Al₂O₃ Ge-on-insulator MOSFETs

D. S. Yu, C. H. Huang, A. Chin, W. J. Chen

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

High quality and dislocation free Al₂O₃ Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10^-3 A/cm² at 1 V and same 1.7 nm EOT with Al₂O₃/Si p-MOSFETs, the Al₂O₃/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al₂O₃/Si control devices and SiO₂/Si universal mobility at E_eff of 1 MV/cm.

Original language	English
Title of host publication	61st Device Research Conference, DRC 2003 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	39-40
Number of pages	2
ISBN (Electronic)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226861
State	Published - 1 Jan 2003
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 23 Jun 2003 → 25 Jun 2003

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2003-January
ISSN (Print)	1548-3770

Conference

Conference	61st Device Research Conference, DRC 2003
Country	United States
City	Salt Lake City
Period	23/06/03 → 25/06/03

Keywords

Breakdown voltage
Capacitance-voltage characteristics
Dielectric breakdown
Etching
MOSFET circuits
Plasma applications
Plasma temperature
Wafer bonding

Access to Document

10.1109/DRC.2003.1226861

Link to publication in Scopus

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Yu, D. S., Huang, C. H., Chin, A., & Chen, W. J. (2003). Low defects and high quality Al₂O₃ Ge-on-insulator MOSFETs. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 39-40). [1226861] (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226861

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title = "Low defects and high quality Al2O3 Ge-on-insulator MOSFETs",

abstract = "High quality and dislocation free Al2O3 Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10-3 A/cm2 at 1 V and same 1.7 nm EOT with Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al2O3/Si control devices and SiO2/Si universal mobility at Eeff of 1 MV/cm.",

keywords = "Breakdown voltage, Capacitance-voltage characteristics, Dielectric breakdown, Etching, MOSFET circuits, Plasma applications, Plasma temperature, Wafer bonding",

author = "Yu, {D. S.} and Huang, {C. H.} and A. Chin and Chen, {W. J.}",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/DRC.2003.1226861",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Yu, DS, Huang, CH, Chin, A & Chen, WJ 2003, Low defects and high quality Al₂O₃ Ge-on-insulator MOSFETs. in 61st Device Research Conference, DRC 2003 - Conference Digest., 1226861, Device Research Conference - Conference Digest, DRC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 39-40, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 23/06/03. https://doi.org/10.1109/DRC.2003.1226861

Low defects and high quality Al₂O₃ Ge-on-insulator MOSFETs. / Yu, D. S.; Huang, C. H.; Chin, A.; Chen, W. J.

61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2003. p. 39-40 1226861 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - High quality and dislocation free Al2O3 Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10-3 A/cm2 at 1 V and same 1.7 nm EOT with Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al2O3/Si control devices and SiO2/Si universal mobility at Eeff of 1 MV/cm.

AB - High quality and dislocation free Al2O3 Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10-3 A/cm2 at 1 V and same 1.7 nm EOT with Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al2O3/Si control devices and SiO2/Si universal mobility at Eeff of 1 MV/cm.

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KW - Capacitance-voltage characteristics

KW - Dielectric breakdown

KW - Etching

KW - MOSFET circuits

KW - Plasma applications

KW - Plasma temperature

KW - Wafer bonding

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