Low defects and high quality Al2O3 Ge-on-insulator MOSFETs

D. S. Yu, C. H. Huang, A. Chin, W. J. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


High quality and dislocation free Al2O3 Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5×10-3 A/cm2 at 1 V and same 1.7 nm EOT with Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al2O3/Si control devices and SiO2/Si universal mobility at Eeff of 1 MV/cm.

Original languageEnglish
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780377273
StatePublished - 1 Jan 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: 23 Jun 200325 Jun 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City


  • Breakdown voltage
  • Capacitance-voltage characteristics
  • Dielectric breakdown
  • Etching
  • MOSFET circuits
  • Plasma applications
  • Plasma temperature
  • Wafer bonding

Fingerprint Dive into the research topics of 'Low defects and high quality Al<sub>2</sub>O<sub>3</sub> Ge-on-insulator MOSFETs'. Together they form a unique fingerprint.

Cite this