Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

S. Y. Wang*, Sheng-Di Lin, H. W. Wu, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

117 Scopus citations

Abstract

Low dark current InAs/GaAs quantum-dot infrared photodetectors (QDIPs) are demonstrated. The dark current is reduced by over three orders of magnitude by using a thin AlGaAs current blocking layer. This thin AlGaAs layer reduces the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with a peak detection wavelength at 6.5μm. The corresponding detectivity is 2.5 × 109 cm Hz1/2/W1/2, which is the highest detectivity reported for a QDIP at 77 K.

Original languageEnglish
Pages (from-to)1023-1025
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number8
DOIs
StatePublished - 19 Feb 2001

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