Low dark current infrared hot-electron transistor for 77 K operation

K. K. Choi*, M. Z. Tidrow, M. Taysing-Lara, W. H. Chang, C. H. Kuan, C. W. Farley, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Recently, thermal imaging using quantum well infrared photodetector (QWIP) focal plane arrays has been demonstrated. However, the operating temperature needs to be kept around 60 K due to the large dark current occurring at higher temperatures. In order to achieve thermal imaging at 77 K, we have designed and demonstrated two infrared hot-electron transistor structures, whose dark current is two to three orders of magnitude lower than that of a QWIP. The resultant dark current falls within the limit of the charge handling capacity of a readout circuit, and the infrared detection is demonstrated to be background limited at 77 K. The noise equivalent temperature difference of the detectors is estimated to be 14 and 26 mK, respectively.

Original languageEnglish
Pages (from-to)908-910
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number7
DOIs
StatePublished - 1 Dec 1993

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    Choi, K. K., Tidrow, M. Z., Taysing-Lara, M., Chang, W. H., Kuan, C. H., Farley, C. W., & Chang, M-C. (1993). Low dark current infrared hot-electron transistor for 77 K operation. Applied Physics Letters, 63(7), 908-910. https://doi.org/10.1063/1.109869