We have developed wideband amplifier that can keep over 10dB gain at the drain voltage/current of 2V/10mA in the frequency range from 100MHz to 3GHz. The fabricated IC achieved low noise figure and high IP3(output) of 1.4dB and 30dBm at 800 MHz, respectively. The present IC employs 0.2μm gate delta-doped MODFET structure fabricated by using phase-shift lithography.
|Number of pages||4|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA|
Duration: 3 Nov 1996 → 6 Nov 1996
|Conference||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||Orlando, FL, USA|
|Period||3/11/96 → 6/11/96|