Low current wideband amplifier using 0.2μm gate MODFET fabricated by using phase-shift lithography

Hidetoshi Ishida*, Kazuo Miyatsuji, Tsuyoshi Tanaka, Hiroshi Takenaka, Hidetoshi Furukawa, Mitsuru Nishitsuji, Akiyoshi Tamura, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

We have developed wideband amplifier that can keep over 10dB gain at the drain voltage/current of 2V/10mA in the frequency range from 100MHz to 3GHz. The fabricated IC achieved low noise figure and high IP3(output) of 1.4dB and 30dBm at 800 MHz, respectively. The present IC employs 0.2μm gate delta-doped MODFET structure fabricated by using phase-shift lithography.

Original languageEnglish
Pages249-252
Number of pages4
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 3 Nov 19966 Nov 1996

Conference

ConferenceProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period3/11/966/11/96

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    Ishida, H., Miyatsuji, K., Tanaka, T., Takenaka, H., Furukawa, H., Nishitsuji, M., Tamura, A., & Ueda, D. (1996). Low current wideband amplifier using 0.2μm gate MODFET fabricated by using phase-shift lithography. 249-252. Paper presented at Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, . https://doi.org/10.1109/GAAS.1996.567880