Low cost high-efficiency high-density-plasma Silicon-based thin film solar cells with high light-soaking stability

T. H. Hsiao*, J. M. Shieh, Peichen Yu, C. H. Shen, M. H. Kao, U. P. Chiou, W. H. Hsieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We investigate the performance of a single-junction amorphous Si (a-Si) and a-Si/a-Si tandem solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density. We demonstrate single-junction a-Si solar cells and a-Si/a-Si tandem solar cell with a conversion efficiency of 9.6% and 8.8%, respectively. Highly light-soaking stable high-density plasma-fabricated a-Si and a-Si/a-Si solar cells were demonstrated with photo-induced degradation in conversion-efficiency as low as 7% and 5%, respectively.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1201-1204
Number of pages4
DOIs
StatePublished - 26 Nov 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period3/06/128/06/12

Keywords

  • amorphous silicon
  • ICP-CVD
  • photovoltaic cells

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