Low cost high-efficiency amorphous silicon solar cells with improved light-soaking stability

Jung Y. Huang*, Chien Y. Lin, Chang Hong Shen, Jia Min Shieh, Bau Tong Dai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


We investigate the performance of amorphous Si (a-Si) solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The ICP system produces a-Si films with low defect density (3×10 15cm- 3), resulting in a conversion efficiency of 9.6%. Deep level transient spectroscopy (DLTS) reveals that hole carriers trapped at defects near the valence band edge delocalize at 130 K; while trapped electrons can only be emitted into the conduction band near room temperature. Spectrally resolved DLTS study further indicates that light soaking enhances the emission rate of the tapped electrons near the conduction band edge while reduces the transition moments from the hole-trapping defect levels to the conduction band. The combined effects and light soaking-induced defects are responsible for the degradation of a thin film solar cell by light soaking.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalSolar Energy Materials and Solar Cells
StatePublished - 1 Mar 2012


  • Amorphous silicon
  • Light soaking
  • Solar cell
  • Thin film photovoltaics

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