Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning

Jiann Heng Chen, Tan Fu Lei, Tien-Sheng Chao, Tien Pao Su, J. Huang, A. Tuan, S. K. Chen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A clustered tool, including in-situ HF-vapour cleaning, can be used to obtain a native-oxide-free silicon surface without exposing the surface to air after etching. This technique is attractive for the poly-plug process for dynamic random access storages (DRAMs) because the high aspect ratio contact in DRAMs can be easily cleaned using vapour phase HF cleaning. A comparison of four methods for contact hole cleaning is presented, including conventional wet HF-dipping and/or a new in-situ HF-vapour cleaning method.

Original languageEnglish
Pages (from-to)756-757
Number of pages2
JournalElectronics Letters
Volume36
Issue number8
DOIs
StatePublished - 13 Apr 2000

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