Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications

H. L. Chen*, Y. F. Chuang, C. C. Lee, C. I. Hsieh, Fu-Hsiang Ko, L. A. Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm.

Original languageEnglish
Pages (from-to)312-318
Number of pages7
JournalMicroelectronic Engineering
Volume67-68
DOIs
StatePublished - 1 Jun 2003
EventProceedings of the 28th International Conference on MNE - Lugano, Switzerland
Duration: 16 Sep 200219 Sep 2002

Keywords

  • 157 nm lithography
  • 193 nm lithography
  • Bilayer structure
  • Bottom antireflective coatings
  • Low alkaline contamination

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