Loss compensation in RF CMOS active inductor using a capacitor

Jyh Neng Yang*, Ming Juei Wu, Chen-Yi Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Loss compensation in a RF CMOS active inductor with using a capacitor is proposed. This simple compensation technique yields a negative conductance characteristic that can compensate for the constant internal loss of active devices. Simulation results show that the inductor obtains a maximum Q-value of 1.2E8, an inductance value in the range of 50 nH to 450 nH, and a 1.4E-6Ω of minimum total equivalent loss in the range of 0.6 GHz to 1.3 GHz.

Original languageEnglish
Pages (from-to)2198-2201
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE87-C
Issue number12
StatePublished - 1 Jan 2004

Keywords

  • Active inductor
  • Inductance
  • Negative conductance
  • Q-value

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