Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

Hong-Shi Ling; Shiang-Yu Wang; Chien-Ping Lee; Ming-Cheng Lo

doi:10.1109/LPT.2008.2009130

Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

Hong-Shi Ling, Shiang-Yu Wang, Chien-Ping Lee, Ming-Cheng Lo

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.

Original language	English
Pages (from-to)	118-120
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	1-4
DOIs	https://doi.org/10.1109/LPT.2008.2009130
State	Published - Jan 2009

Keywords

Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices

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title = "Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K",

abstract = "We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.",

keywords = "Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices",

author = "Hong-Shi Ling and Shiang-Yu Wang and Chien-Ping Lee and Ming-Cheng Lo",

year = "2009",

month = jan,

doi = "10.1109/LPT.2008.2009130",

language = "English",

volume = "21",

pages = "118--120",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

AU - Ling, Hong-Shi

AU - Wang, Shiang-Yu

AU - Lee, Chien-Ping

AU - Lo, Ming-Cheng

PY - 2009/1

Y1 - 2009/1

N2 - We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.

AB - We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.

KW - Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices

U2 - 10.1109/LPT.2008.2009130

DO - 10.1109/LPT.2008.2009130

M3 - Article

VL - 21

SP - 118

EP - 120

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1-4

ER -