Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

Hong-Shi Ling, Shiang-Yu Wang, Chien-Ping Lee, Ming-Cheng Lo

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
Original languageEnglish
Pages (from-to)118-120
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number1-4
DOIs
StatePublished - Jan 2009

Keywords

  • Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices

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