Long wavelength oxide-confined VCSEL using InGaAsN quantum wells

H. C. Lai*, J. S. Pan, Alice C.F. Li, M. C. Tang, C. C. Wu, T. D. Lee, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Characteristics of oxide-confined vertical-cavity surface emitting laser emitting at 1289nm will be presented in this paper. The wafer is monolithically grown using InGaAsN/GaAs QWs as active layer and GaAs/AlGaAs conventional DBRs. In the structure, the laser employs 39 pairs N-GaAs/Al0.9GaAs and 23 pairs P-GaAs/Al0.9GaAs with a selectively oxide layer located at first DBR close to active region, providing the current and optical confinement. The device processing is similar to the fabrication for current 850nm oxVCSELs. Mesa etching is used to expose the Al-rich AlGaAs layer and followed by oxidation to form the current confinement. The maximum light output power is around 950uW at room temperature under CW operation with a threshold current around 6mA for 10um aperture size devices. The device can still lase at 100°C with a maximum power of 0.14mW. Slope efficiency is 0.133(W/A) and side mode suppression ratio (SMSR) is around 20dB at 10mA operation. The aging data and speed transmission experimental data will also be presented.

Original languageEnglish
Pages (from-to)541-548
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5280 II
DOIs
StatePublished - 1 Dec 2003
EventAPOC 2003: Asia-Pacific Optical and Wireless Communications: Materials, Active Devices, and Optical Amplifier - Wuhan, China
Duration: 4 Nov 20036 Nov 2003

Keywords

  • InGaAsN

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