Long-wavelength mid-infrared reflectors using guided-mode resonance

Kou Wei Lai; Sheng-Di Lin; Zong Lin Li; Chi Cheng Wang

doi:10.1364/AO.52.006906

Long-wavelength mid-infrared reflectors using guided-mode resonance

Kou Wei Lai, Sheng-Di Lin^*, Zong Lin Li, Chi Cheng Wang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have proposed and fabricated a new mid-infrared reflector using the guided-mode resonance (GMR). The GMR reflector consists of subwavelength Ge grating on GaAs substrate with a low-refractive-index SiOx layer in between. With a total thickness of about 2 μm, a near-100% reflectivity at 8 μm has been obtained both theoretically and experimentally.

Original language	English
Pages (from-to)	6906-6909
Number of pages	4
Journal	Applied Optics
Volume	52
Issue number	28
DOIs	https://doi.org/10.1364/AO.52.006906
State	Published - 1 Oct 2013

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title = "Long-wavelength mid-infrared reflectors using guided-mode resonance",

abstract = "We have proposed and fabricated a new mid-infrared reflector using the guided-mode resonance (GMR). The GMR reflector consists of subwavelength Ge grating on GaAs substrate with a low-refractive-index SiOx layer in between. With a total thickness of about 2 μm, a near-100% reflectivity at 8 μm has been obtained both theoretically and experimentally.",

author = "Lai, {Kou Wei} and Sheng-Di Lin and Li, {Zong Lin} and Wang, {Chi Cheng}",

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AU - Li, Zong Lin

AU - Wang, Chi Cheng

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Y1 - 2013/10/1

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AB - We have proposed and fabricated a new mid-infrared reflector using the guided-mode resonance (GMR). The GMR reflector consists of subwavelength Ge grating on GaAs substrate with a low-refractive-index SiOx layer in between. With a total thickness of about 2 μm, a near-100% reflectivity at 8 μm has been obtained both theoretically and experimentally.

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