Long-term photocapacitance decay behavior in undoped GaN

H. M. Chung*, Y. C. Pan, W. C. Chuang, N. C. Chen, C. C. Tsai, M. C. Lee, W. H. Chen, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 × 10-27 cm2 were retrieved. These are interpreted the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.

Original languageEnglish
Pages (from-to)5871-5874
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number10
DOIs
StatePublished - 1 Oct 2001

Keywords

  • Decay
  • Dislocations
  • GaN
  • Logarithmic
  • MOVPE
  • Photocapacitance

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