Long-endurance nanocrystal TIO 2 resistive memory using a TaON buffer layer

C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, Albert Chin*

*Corresponding author for this work

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Using nanocrystal (nc) TiO 2 and TaON buffer layer, the Ni/GeO x /nc-TiO 2 /TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10 10 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Original languageEnglish
Article number6058577
Pages (from-to)1749-1751
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
StatePublished - 1 Dec 2011

Keywords

  • GeO
  • Hopping conduction
  • Resistive random access memory (RRAM)
  • TiO

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