@inproceedings{294ce0636db8467789ccf56fc3e1c952,
title = "Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs",
abstract = "Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.",
author = "Faiz Aizad and Heng-Tung Hsu and Kuo, {Chien I.} and Hsu, {Li Han} and Wu, {Chien Ying} and Chang, {Edward Yi} and Huang, {Guo Wei} and Tsai, {Szu Ping}",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/ESCINANO.2010.5700948",
language = "English",
isbn = "9781424488544",
series = "2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings",
booktitle = "2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings",
note = "null ; Conference date: 01-12-2010 Through 03-12-2010",
}