Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs

Faiz Aizad; Heng-Tung Hsu; Chien I. Kuo; Li Han Hsu; Chien Ying Wu; Edward Yi Chang; Guo Wei Huang; Szu Ping Tsai

doi:10.1109/ESCINANO.2010.5700948

Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs

Faiz Aizad^*, Heng-Tung Hsu, Chien I. Kuo, Li Han Hsu, Chien Ying Wu, Edward Yi Chang, Guo Wei Huang, Szu Ping Tsai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, In_xGa_1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/In_xGa_1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.

Original language	English
Title of host publication	2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
DOIs	https://doi.org/10.1109/ESCINANO.2010.5700948
State	Published - 1 Dec 2010
Event	2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Kuala Lumpur, Malaysia Duration: 1 Dec 2010 → 3 Dec 2010

Publication series

Name	2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings

Conference

Conference	2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010
Country	Malaysia
City	Kuala Lumpur
Period	1/12/10 → 3/12/10

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Aizad, F., Hsu, H-T., Kuo, C. I., Hsu, L. H., Wu, C. Y., Chang, E. Y., Huang, G. W., & Tsai, S. P. (2010). Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs. In 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings [5700948] (2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings). https://doi.org/10.1109/ESCINANO.2010.5700948

Aizad, Faiz ; Hsu, Heng-Tung ; Kuo, Chien I. ; Hsu, Li Han ; Wu, Chien Ying ; Chang, Edward Yi ; Huang, Guo Wei ; Tsai, Szu Ping. / Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs. 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings. 2010. (2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings).

@inproceedings{294ce0636db8467789ccf56fc3e1c952,

title = "Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs",

abstract = "Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.",

author = "Faiz Aizad and Heng-Tung Hsu and Kuo, {Chien I.} and Hsu, {Li Han} and Wu, {Chien Ying} and Chang, {Edward Yi} and Huang, {Guo Wei} and Tsai, {Szu Ping}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ESCINANO.2010.5700948",

language = "English",

isbn = "9781424488544",

series = "2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings",

booktitle = "2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings",

note = "null ; Conference date: 01-12-2010 Through 03-12-2010",

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Aizad, F, Hsu, H-T, Kuo, CI, Hsu, LH, Wu, CY, Chang, EY, Huang, GW & Tsai, SP 2010, Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs. in 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings., 5700948, 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings, 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010, Kuala Lumpur, Malaysia, 1/12/10. https://doi.org/10.1109/ESCINANO.2010.5700948

Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs. / Aizad, Faiz; Hsu, Heng-Tung; Kuo, Chien I.; Hsu, Li Han; Wu, Chien Ying; Chang, Edward Yi; Huang, Guo Wei; Tsai, Szu Ping.

2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings. 2010. 5700948 (2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs

AU - Aizad, Faiz

AU - Hsu, Heng-Tung

AU - Kuo, Chien I.

AU - Hsu, Li Han

AU - Wu, Chien Ying

AU - Chang, Edward Yi

AU - Huang, Guo Wei

AU - Tsai, Szu Ping

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.

AB - Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.

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U2 - 10.1109/ESCINANO.2010.5700948

DO - 10.1109/ESCINANO.2010.5700948

M3 - Conference contribution

AN - SCOPUS:79951785731

SN - 9781424488544

T3 - 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings

BT - 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings

Y2 - 1 December 2010 through 3 December 2010

ER -

Aizad F, Hsu H-T, Kuo CI, Hsu LH, Wu CY, Chang EY et al. Logic performance of 40 nm InAs/In_xGa_1-xAs composite channel HEMTs. In 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings. 2010. 5700948. (2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings). https://doi.org/10.1109/ESCINANO.2010.5700948