Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs

Faiz Aizad*, Heng-Tung Hsu, Chien I. Kuo, Li Han Hsu, Chien Ying Wu, Edward Yi Chang, Guo Wei Huang, Szu Ping Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1-xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III-V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III-V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1-xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.

Original languageEnglish
Title of host publication2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
DOIs
StatePublished - 1 Dec 2010
Event2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Kuala Lumpur, Malaysia
Duration: 1 Dec 20103 Dec 2010

Publication series

Name2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings

Conference

Conference2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010
CountryMalaysia
CityKuala Lumpur
Period1/12/103/12/10

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    Aizad, F., Hsu, H-T., Kuo, C. I., Hsu, L. H., Wu, C. Y., Chang, E. Y., Huang, G. W., & Tsai, S. P. (2010). Logic performance of 40 nm InAs/InxGa1-xAs composite channel HEMTs. In 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings [5700948] (2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings). https://doi.org/10.1109/ESCINANO.2010.5700948