Logic-I/O Threshold Comparing γ-Dosimeter in Radiation Insensitive Deep-Sub-Micron CMOS

Adrian Tang, Yangyho Kim, Mau-Chung Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper discusses challenges of implementing embedded dosimeters into larger CMOS systems-on-chip (SoCs) in deep-scaled CMOS technologies (with gate lengths smaller than 90 nm) where the high level of intrinsic radiation hardness and limited availability of floating gate structures prohibit realizing a highly sensitive radfet-type dosimeter. We therefore propose a novel Logic-I/O Threshold Comparison Dosimeter, which offers compatibility with advanced CMOS technology nodes and co-integration with other circuitry. The proposed dosimeter estimates dose level by directly comparing threshold voltages between I/O and logic devices. Furthermore, through carefully sizing the logic and I/O devices and designing the vital comparator circuitry, we can also achieve required temperature independence for deep-space applications. A prototype is then fabricated in 65-nm CMOS, and measured up to 75 Mrad(Si) of total ionized dose at a Cobalt 60 (γ) facility.

Original languageEnglish
Article number7454832
Pages (from-to)1247-1250
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number2
DOIs
StatePublished - 1 Apr 2016

Keywords

  • Advanced CMOS
  • CMOS dosimeter
  • deep-submicron technology

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